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 T H AT Corporation
FEATURES
* * * Two Matched NPN Transistors Two Matched PNP Transistors Monolithic Construction Low Noise -- 0.75 nV/ Hz (PNP) -- 0.8 nV/ Hz (NPN) High Speed -- ft= 350 MHz (NPN) -- ft= 325 MHz (PNP) Excellent Matching - 500 mV typ Dielectrically Isolated 25 V VCEO * * * * * *
Quad Low-Noise NPN / PNP Transistor Array THAT140 APPLICATIONS
Microphone Preamplifiers Tape Head Preamplifiers Current Sources Current Mirrors Log/Antilog Amplifiers Multipliers
*
* * *
DESCRIPTION
THAT140 is a quad, large-geometry monolithic NPN/PNP transistor array which combines low noise, high speed and excellent parametric matching. The large geometries typically result in 25 W base spreading resistance for the PNP devices (30 W for the NPNs), producing 0.75 nV Hz voltage noise (0.8
nV Hz for the NPNs). This makes these parts an ideal choice for low-noise amplifier input stages. Fabricated on a Complementary Bipolar Dielectrically Isolated process, all four transistors are electrically isolated from each other by a layer of oxide.
The resulting low collector-to-substrate capacitance produces a typical NPN ft of 350 MHz, 325 Mhz for the PNPs. This delivers AC performance similar to discrete 2N3904- and 2N3906-class devices. Dielectric isolation also minimizes crosstalk and provides complete DC isolation. Substrate biasing is not required for normal operation, though the substrate should be grounded to optimize speed. The monolithic construction assures excellent parameter matching and tracking over temperature.
14
13 Q2 Q1 1 2
12
11 NC
10
9 Q4
8
Q3 3 4 5 6
SUB 7
Figure 1. Pin Configuration THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Rev. 11/29/00
Page 2
SPECIFICATIONS 1
Maximum Ratings (T A = 25C)
Parameter NPN Collector-Emitter Voltage NPN Collector-Base Voltage NPN Emitter-Base Voltage NPN Collector Current NPN Emitter Current PNP Collector-Emitter Voltage PNP Collector-Base Voltage PNP Emitter-Base Voltage PNP Collector Current PNP Emitter Current Collector-Collector Voltage Emitter-Emitter Voltage Operating Temperature Range Maximum Junction Temperature Storage Temperature Symbol BVCEO BVCBO BVEBO IC IE BVCEO BVCBO BVEBO IC IE BVCC BVEE TA TJMAX TSTORE -45 IC = 1 mAdc, IB = 0 IC = 10 mAdc, IE = 0 IE = 10 mAdc, IC = 0 Conditions IC = 1 mAdc, IB = 0 IC = 10 mAdc, IE = 0 IE = 10 mAdc, IC = 0 Min 25 25 5 10 10 -25 -25 -5 -10 -10 100 100 0 Typ 35 35 3/4 20 20 -40 -40 3/4 -20 -20 200 200 3/4 3/4 70 150 125 3/4 3/4 3/4 Max 3/4 3/4 3/4 Units V V V mA mA V V V mA mA V V C C C
0.7500.004 (19.050.10)
0.050 (1.27) Typ
0.25.004 (6.350.10)
1
0.060 (1.52) Typ.
0.32 Max. (8.13) 0.1250.004 (3.180.10)
0.157 0.245 (3.99) (6.2) Max Max 1 0.018 (0.46) Max
0.10 Typ. (2.54) 0.075 (1.91)
0.018 (0.46)
0.010 (0.25)
0.344 (8.74) Max
0.069 (1.75) Max
0.010 (0.25) Max
Figure 2. Dual-In-Line Package Outline
Figure 3. Surface Mount Package Outline
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Page 3
THAT140 Transistor Array
Electrical Characteristics 2
Parameter NPN Current Gain Symbol hfe Conditions VCB = 10 V IC = 1 mA IC = 10 mA NPN Current Gain Matching NPN Noise Voltage Density NPN Gain-Bandwidth Product NPN DVBE (VBE1-VBE2) Dhfe eN ft VOS VCB = 10 V, IC = 1 mA VCB = 10 V, IC = 1 mA, 1 kHz IC = 1 mA, VCB = 10 V IC = 1 mA IC = 10 mA NPN DIB (IB1-IB2) IOS IC = 1 mA IC = 10 mA NPN Collector-Base Leakage Current NPN Bulk Resistance NPN Base Spreading Resistance NPN Collector Saturation Voltage NPN Output Capacitance NPN Collector-Collector Capacitance (Q1-Q2) PNP Current Gain CCC hfe VCC = 0 V, 100 kHz VCB = 10 V IC = 1 mA IC = 10 mA PNP Current Gain Matching PNP Noise Voltage Density PNP Gain-Bandwidth Product PNP DVBE (VBE3-VBE4) Dhfe eN ft VOS VCB = 10 V, IC = 1 mA VCB = 10 V, IC = 1 mA, 1 kHz IC = 1 mA, VCB = 10 V IC = 1 mA IC = 10 mA PNP DIB (IB3-IB4) IOS IC = 1 mA IC = 10 mA PNP Collector-Base Leakage Current PNP Bulk Resistance PNP Base Spreading Resistance PNP Collector Saturation Voltage PNP Output Capacitance PNP Collector-Collector Capacitance (Q3-Q4) CCC VCC = 0 V, 100 kHz 0.6 pF ICBO rBE rbb VCE(SAT) COB VCB = 25 V VCB = 0 V, 10mA < IC < 10mA VCB = 10 V, IC = 1mA IC = 1 mA, IB = 100 mA VCB = 10 V, IE = 0 mA, 100 kHz -- -- -- -- -25 2 25 -0.05 3 -- -- -- pA W W V pF -- -- -- -- 50 50 -- -- 75 75 5 0.75 325 0.5 0.5 700 7 3 3 1800 18 3/4 3/4 -- -- % nV / Hz MHz mV mV nA nA 0.7 pF ICBO rBE rbb VCE(SAT) COB VCB = 25 V VCB = 0 V, 10mA < IC < 10mA VCB = 10 V, IC = 1mA IC = 1 mA, IB = 100 mA VCB = 10 V, IE = 0 mA, 100 kHz -- -- -- -- 25 2 30 0.05 3 -- -- -- pA W W V pF -- -- -- -- 60 60 -- -- 100 100 5 0.8 350 0.5 0.5 500 5 3 3 1500 15 3/4 3/4 -- -- % nV / Hz MHz mV mV nA nA Min Typ Max Units
1. All specifications subject to change without notice. 2. Unless otherwise noted, TA=25C. THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Rev. 11/29/00
Page 4
Notes
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com


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